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HOME  >  PRODUCTS  >  Single Wafer APCVD A200V

PRODUCTS

Face Down Deposition, High Performance APCVD

A200V

  • Thickness Nu WiW ±2%
  • Less Particle Design
  • Good Step Coverage
  • Small Footprint
  • Lower Temp. Oxide
  • Good Maintenability
  • Safety

Feature

  • Face down deposition in closed chamber by chucking wafer on heater above dispersion head realized good thermal uniformity to make good film thickness Nu, and less particle additions.
  • Backside Gas from the backside wafer prevent backside deposition and prevent extra SiO deposition on the wall of parts of chambers.
  • Minimized system footprint.
  • Low temp. process is available with O3 (150℃~350℃)

Performance

Film Thickness Nu ≦±2%
Wafer Size 8 inch or the less
Gas SiH4, O2, PH3, B2H6, TEOS, TEB, TMOP, O3, N2
Deposition Temp. 300℃~450℃(150℃~350℃ at Ozone Process)
Productivity 20WPH at depositing 500nm

Specifictions

System Size 890mm(W) x 2300mm(D) x 2250mm(H)
Heaters Heater Coils
Loader/Unloader Robot Cassette to Cassette transfer, Sliders.
Dispersion Head (Gas Nozzle) Round Type

Service Division

TEL:+81-48-989-1881

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