Continuous High Throughput APCVD for 8 inch wafers
AMAX800V
- 100WPH @ 8 inch wafers
- Metal addition Free design and Long Term Stable Process with SiC Tray
- Easy maintenance with Automatic Head Lifting mechanism and automated Tray Replacement System
Feature
- Revised to high speed tray transfer system to realise 100WPH.
- AMAX Type Dispersion Heads, Post Mix Dispersion Heads to mix SiH4, PH3, B2H6 and O2 at deposition zone to deposite LTO realize excellent film thickness and Dopant Uniformity.
- SiC Trays as susceptors prevent heavy metal addition and help long term stable process for long term production.
- Good maintenability and Operators safety are given by automated head base liftting system and automated tray exchange system, that shorten PM time for longer use of system
Performance
| Film Thickness Nu |
≦±3.0％ |
| Wafer Size |
8 inch or the less |
| Gas |
SiH4, O2, PH3, B2H6, N2 |
| Deposition Temp. |
350℃～450℃ |
| Productivity |
100WPH |
Specifictions
| System Size |
1460mm(W) x 3830mm(D) x 2250mm(D) |
| Heaters |
Heater Coils |
| Loader/Unloader |
Robot Cassette to Cassette Transfer |
| Dispersion Head (Gas Nozzle) |
AMAX Type 3 Dispersion Head |
