
Spin type cleaning system compatible with high definition photomask
WULF series
- High speed diffusion of fluid to the cleaning surface
- Rapid elimination of contamination and reaction products
- Water markless drying
Feature
- With the advancement of LSI performance, photomasks and reticles are required to have higher definition and precision.
- Our cleaning system contributes to the high clean and yield improvement of these products and cooperates in the production of more complete products.
- Equipped with a spin cleaning unit using functional water,
 This unit is capable of removing organic matter, metal ion and contamination up to the detection limit level by centrifugal force of work rotation and discharge of ozone water and ammonia added hydrogen water.
 By switching and cleaning each solution, it is an environment-friendly tool that can remove impure deposits on the workpiece at high speed, and at the same time manage waste liquid.
- Adoption of cleaning solution and method to replace RCA cleaning solution,
 SPM  →  Ozone water
 ・  Realization of complete room temperature cleaning
 (high temperature process unnecessary),
 ・  Chemical solution residual amount reduction on mask,
 ・  Securing waste solution treatment (ISO14000 measure),
 
 SC-1  →  Hydrogen water (ammonia added)
 ・  Etching prevention of MoSi halftone mask,
 
Performance
| PSM final clean (SPM free) | 
| Category | No. | Item | Specification | 
| Blank | 1 | Particle    Free | >32nm | 
| 2 | PRE% | ≧95% | 
| Image Layer (pattern side)
 | 3 | Remaining Soft defect on QZ | ≧0.05um (Yield : 98%) | 
| 4 | Remaining Soft defect on Shifter | ≧0.05um, ≦10ea    (Yield : 98%) | 
| 5 | SRAF    (Dark) missing | No    missing | 
| 6 | Pattern    damage, ESD, Scratch | No    damage | 
| 7 | Shifter    change (Phase) | ≦-0.2 degree, average by 10X clean | 
| 8 | Shifter    change (Trans.) | ≦0.025%, average by 10X clean | 
| 9 | Shifter    change (CD mean) | ≦0.15nm, average by 10X clean | 
| 10 | Shifter    change (CD Range) | ≦0.5nm, average by 10X clean | 
| Ion residues | 11 | Chemical    residue (SO4) | ≦0.5 ppb | 
| 12 | Chemical    residue (NH4) | ≦17.0 ppb | 
Outline specification
Size
| Cleaning device body | 7300㎜(W) x 1410㎜(D) x 2300㎜(H) | 
Power BOX | 1400㎜(W) x 500㎜(D) x 2150㎜(H) | 
| Chemical BOX | 2500㎜(W) x 700㎜(D) x 2000㎜(H) | 
| Filter BOX | 2600㎜(W) x 700㎜(D) x 2000㎜(H) | 
| Hot DIW Unit | 1250㎜(W) x 550㎜(D) x 1750㎜(H) | 
| H2 water・CO2 water Unit | 1050㎜(W) x 1500㎜(D) x 2000㎜(H) | 
| O3 water Unit | 570㎜(W) x 850㎜(D) x 2000㎜(H) | 
| Utility | Three phase 200V & Single phase 100V DIW & Cooling water
 Clean dry air & Nitrogen gas
 General exhaust, Acid exhaust & Alkaline exhaust
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