Atmospheric Pressure Low Temperature SiH<sub>4</sub>-O<sub>3</sub> CVD System

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Atmospheric Pressure Low Temperature SiH₄-O₃ CVD System

Low deposition temperature (150-300 ℃)
High quality SiO2 film
Low stress、Plasma damage-less、Less particulates
Low Cost of Ownership (CoO)
Small foot print、No vacuum system and plasma source、Low and reasonable tool cost

In-line APCVD for rigid/flexible electronics such as FPD.
Newly developed gas dispersion heads enable SiO2 formation for large area with excellent film properties.

System Size	1300mm(W) x 7350mm(D) x 2000mm(H)
Gas Head	Equipped with two gas dispersion heads with a deposition width of 760mm

TEL:+81-48-989-1881